JIAENSEMI GL75HF120F1UR1

JIAENSEMI · Thyristors & Power Discretes · MPN GL75HF120F1UR1

No reviews yet — be the first to review JIAENSEMI GL75HF120F1UR1.

Specifications

Td(off)160ns
Pd - Power Dissipation445W
Td(on)38ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)150pF
Input Capacitance(Cies)3.2nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))3.1V@75A,15V
Switching Energy(Eoff)2.4mJ

Technical details

445W 75A 1.2kV FS (Field Stop) Single IGBTs RoHS

Related Thyristors & Power Discretes