JIAENSEMI · Thyristors & Power Discretes · MPN GL50HF120T1UA1
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| Td(off) | 230ns |
|---|---|
| Pd - Power Dissipation | 200W |
| Td(on) | 40ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 140pF |
| Input Capacitance(Cies) | 3.6nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.7mA |
| Vce Saturation(VCE(sat)) | 2.5V@50A,15V |
| Switching Energy(Eoff) | 3mJ |
200W 50A 1.2kV FS (Field Stop) Single IGBTs RoHS