JIAENSEMI · Thyristors & Power Discretes · MPN GL150HF120T1SZ1
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| Pd - Power Dissipation | 658W |
|---|---|
| Td(off) | 301ns |
| Td(on) | 139ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 240pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@5.7mA |
| Vce Saturation(VCE(sat)) | 1.9V@150A,15V |
| Switching Energy(Eoff) | 12.3mJ |
| Turn-On Energy (Eon) | 4.4mJ |
658W 150A 1.2kV FS (Field Stop) Single IGBTs RoHS