JIAENSEMI GL150HF120F1UR1

JIAENSEMI · Thyristors & Power Discretes · MPN GL150HF120F1UR1

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Specifications

Td(off)460ns
Pd - Power Dissipation1.04kW
Td(on)95ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)310pF
Input Capacitance(Cies)6.4nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@2mA
Vce Saturation(VCE(sat))3V@150A,15V
Switching Energy(Eoff)6.3mJ

Technical details

1.04kW 150A 1.2kV FS (Field Stop) Single IGBTs RoHS

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