JIAENSEMI · Thyristors & Power Discretes · MPN GL100HF120F1UR1
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| Pd - Power Dissipation | 565W |
|---|---|
| Td(off) | 350ns |
| Td(on) | 57ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 200pF |
| Input Capacitance(Cies) | 4.38nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 3.1V@100A,15V |
| Switching Energy(Eoff) | 2.7mJ |
565W 100A 1.2kV FS (Field Stop) Single IGBTs RoHS