Infineon · Thyristors & Power Discretes · MPN SKW07N120
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| Td(off) | 440ns |
|---|---|
| Pd - Power Dissipation | 125W |
| Td(on) | 27ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 16.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 70nC |
| Reverse Recovery Time(trr) | 60ns |
| Switching Energy(Eoff) | - |
125W 16.5A 1.2kV NPT (Non-Punch Through) TO-247-3-1 Single IGBTs RoHS