Infineon · Thyristors & Power Discretes · MPN SKB02N60
No reviews yet — be the first to review Infineon SKB02N60.
| Pd - Power Dissipation | 30W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 130ns |
| Turn-On Energy (Eon) | 64uJ |
30W 6A 600V NPT (Non-Punch Through) TO-263 Single IGBTs RoHS