Infineon · Thyristors & Power Discretes · MPN SGW50N60HS
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| Td(off) | 310ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Td(on) | 47ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.15V@15V,50A |
| Gate Charge(Qg) | 179nC |
| Switching Energy(Eoff) | 1.96mJ |
| Turn-On Energy (Eon) | 1.96mJ |
416W 100A 600V NPT (Non-Punch Through) TO-247-3-1 Single IGBTs RoHS