Infineon · Thyristors & Power Discretes · MPN SGP30N60
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| Pd - Power Dissipation | 250W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 41A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn-On Energy (Eon) | - |
250W 41A 600V NPT (Non-Punch Through) TO-220AB Single IGBTs RoHS