Infineon · Thyristors & Power Discretes · MPN SGD02N60
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| Td(off) | 259ns |
|---|---|
| Pd - Power Dissipation | 30W |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 14nC |
| Switching Energy(Eoff) | 28uJ |
| Turn-On Energy (Eon) | 36uJ |
30W 6A 600V NPT (Non-Punch Through) TO-252 Single IGBTs RoHS