Infineon · Thyristors & Power Discretes · MPN SGB20N60E3045A
No reviews yet — be the first to review Infineon SGB20N60E3045A.
| Td(off) | 225ns |
|---|---|
| Pd - Power Dissipation | 179W |
| Td(on) | 36ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,20A |
| Gate Charge(Qg) | 100nC |
| Switching Energy(Eoff) | 330uJ |
| Turn-On Energy (Eon) | 440uJ |
179W 40A 600V NPT (Non-Punch Through) TO-263-3 Single IGBTs RoHS