Infineon · Thyristors & Power Discretes · MPN SGB02N120CT
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| Td(off) | 260ns |
|---|---|
| Pd - Power Dissipation | 62W |
| Td(on) | 23ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 6.2A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.6V@15V,2A |
| Gate Charge(Qg) | 11nC |
| Turn-On Energy (Eon) | 220uJ |
62W 6.2A 1.2kV NPT (Non-Punch Through) TO-263 Single IGBTs RoHS