Infineon · Thyristors & Power Discretes · MPN IRGR3B60KD2TRP
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| Td(off) | 110ns |
|---|---|
| Pd - Power Dissipation | 52W |
| Td(on) | 18ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 7.8A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 6.6pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.4V@3A,15V |
| Reverse Recovery Time(trr) | 77ns |
| Switching Energy(Eoff) | 39uJ |
52W 7.8A 600V NPT (Non-Punch Through) DPAK Single IGBTs RoHS