Infineon IRGP6640DPBF

Infineon · Thyristors & Power Discretes · MPN IRGP6640DPBF

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Specifications

Pd - Power Dissipation200W
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)53A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)70ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

200W 53A 600V TO-247AC Single IGBTs RoHS

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