Infineon · Thyristors & Power Discretes · MPN IRGP6640D-EPBF
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| Pd - Power Dissipation | 200W |
|---|---|
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 53A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | - |
200W 53A 600V TO-247AD Single IGBTs RoHS