Infineon IRGP4790PBF

Infineon · Thyristors & Power Discretes · MPN IRGP4790PBF

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Specifications

Pd - Power Dissipation455W
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)140A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Switching Energy(Eoff)2.2mJ
Turn-On Energy (Eon)2.5mJ

Technical details

455W 140A 650V TO-247AC Single IGBTs RoHS

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