Infineon · Thyristors & Power Discretes · MPN IRGP4790-EPBF
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| Td(off) | 200ns |
|---|---|
| Pd - Power Dissipation | 455W |
| Td(on) | 50ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 210nC |
| Switching Energy(Eoff) | 2.2mJ |
| Turn-On Energy (Eon) | 2.5mJ |
455W 140A 650V TO-247AD Single IGBTs RoHS