Infineon IRGP4263DPBF

Infineon · Thyristors & Power Discretes · MPN IRGP4263DPBF

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Specifications

Td(off)140ns
Pd - Power Dissipation325W
Td(on)70ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)145nC
Reverse Recovery Time(trr)170ns
Switching Energy(Eoff)1.4mJ

Technical details

325W 90A 650V TO-247AC Single IGBTs RoHS

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