Infineon · Thyristors & Power Discretes · MPN IRGP4263D-EPBF
No reviews yet — be the first to review Infineon IRGP4263D-EPBF.
| Td(off) | 140ns |
|---|---|
| Pd - Power Dissipation | 325W |
| Td(on) | 70ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 145nC |
| Reverse Recovery Time(trr) | 170ns |
| Switching Energy(Eoff) | 1.4mJ |
325W 90A 650V TO-247AD Single IGBTs RoHS