Infineon IRGP4262DPBF

Infineon · Thyristors & Power Discretes · MPN IRGP4262DPBF

No reviews yet — be the first to review Infineon IRGP4262DPBF.

Specifications

Td(off)73ns
Pd - Power Dissipation250W
Td(on)24ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)70nC
Reverse Recovery Time(trr)170ns
Switching Energy(Eoff)240uJ

Technical details

250W 60A 650V TO-247AC Single IGBTs RoHS

Related Thyristors & Power Discretes