Infineon · Thyristors & Power Discretes · MPN IRGP4069D-EPBF
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| Td(off) | 105ns |
|---|---|
| Pd - Power Dissipation | 268W |
| Td(on) | 46ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 76A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 104nC |
| Reverse Recovery Time(trr) | 120ns |
| Switching Energy(Eoff) | 632uJ |
268W 76A 600V TO-247AD Single IGBTs RoHS