Infineon IRGP4069D-EPBF

Infineon · Thyristors & Power Discretes · MPN IRGP4069D-EPBF

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Specifications

Td(off)105ns
Pd - Power Dissipation268W
Td(on)46ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)76A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)104nC
Reverse Recovery Time(trr)120ns
Switching Energy(Eoff)632uJ

Technical details

268W 76A 600V TO-247AD Single IGBTs RoHS

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