Infineon IRGP4063D1PBF

Infineon · Thyristors & Power Discretes · MPN IRGP4063D1PBF

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Specifications

Td(off)160ns
Pd - Power Dissipation330W
Td(on)60ns
Operating Temperature-
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Vce Saturation(VCE(sat))-
Reverse Recovery Time(trr)80ns
Switching Energy(Eoff)1.1mJ
Turn-On Energy (Eon)1.4mJ

Technical details

330W 100A 600V TO-247AC Single IGBTs RoHS

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