Infineon · Thyristors & Power Discretes · MPN IRGP4063D1-EPBF
No reviews yet — be the first to review Infineon IRGP4063D1-EPBF.
| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 330W |
| Td(on) | 60ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 150nC |
| Reverse Recovery Time(trr) | 80ns |
| Switching Energy(Eoff) | 1.1mJ |
330W 100A 600V TO-247AD Single IGBTs RoHS