Infineon IRGP4063D-EPBF

Infineon · Thyristors & Power Discretes · MPN IRGP4063D-EPBF

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Specifications

Td(off)145ns
Pd - Power Dissipation330W
Td(on)60ns
Operating Temperature-
Current - Collector(Ic)96A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)140nC
Reverse Recovery Time(trr)115ns
Switching Energy(Eoff)-

Technical details

330W 96A 600V TO-247AD Single IGBTs RoHS

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