Infineon · Thyristors & Power Discretes · MPN IRGP35B60PDPBF
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| Pd - Power Dissipation | 308W |
|---|---|
| Td(off) | 110ns |
| Td(on) | 26ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 47pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V |
| Vce Saturation(VCE(sat)) | 1.85V |
| Reverse Recovery Time(trr) | 42ns |
| Collector Cut-Off Current (Ices) | 3uA |
308W 60A 600V NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS