Infineon IRGP30B60KD-EP

Infineon · Thyristors & Power Discretes · MPN IRGP30B60KD-EP

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Specifications

Pd - Power Dissipation304W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)125ns
Switching Energy(Eoff)825uJ
Turn-On Energy (Eon)350uJ

Technical details

304W 60A 600V NPT (Non-Punch Through) TO-247AD Single IGBTs RoHS

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