Infineon · Thyristors & Power Discretes · MPN IRGIB6B60KDPBF-INF
No reviews yet — be the first to review Infineon IRGIB6B60KDPBF-INF.
| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 38W |
| Td(on) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 11A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 18.2nC |
| Reverse Recovery Time(trr) | 91ns |
| Switching Energy(Eoff) | - |
38W 11A 600V TO-220 Single IGBTs RoHS