Infineon IRGB4059DPBF

Infineon · Thyristors & Power Discretes · MPN IRGB4059DPBF

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Specifications

Td(off)65ns
Pd - Power Dissipation56W
Td(on)25ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)8A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)13nC
Reverse Recovery Time(trr)55ns
Switching Energy(Eoff)75uJ

Technical details

56W 8A 600V TO-220AB Single IGBTs RoHS

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