Infineon · Thyristors & Power Discretes · MPN IRG8P60N120KDPBF
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| Pd - Power Dissipation | 420W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 210ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 2.8mJ |
420W 100A 1.2kV TO-247AC Single IGBTs RoHS