Infineon · Thyristors & Power Discretes · MPN IRG8P25N120KDPBF
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| Td(off) | 170ns |
|---|---|
| Pd - Power Dissipation | 180W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 135nC |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 900uJ |
180W 40A 1.2kV TO-247AC Single IGBTs RoHS