Infineon · Thyristors & Power Discretes · MPN IRG7PSH54K10DPBF
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| Td(off) | 490ns |
|---|---|
| Pd - Power Dissipation | 520W |
| Td(on) | 110ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 435nC |
| Reverse Recovery Time(trr) | 170ns |
| Switching Energy(Eoff) | 2.8mJ |
520W 120A 1.2kV TO-274AA Single IGBTs RoHS