Infineon · Thyristors & Power Discretes · MPN IRG7PK35UD1-EPBF
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| Td(off) | 150ns |
|---|---|
| Pd - Power Dissipation | 167W |
| Td(on) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.4kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 98nC |
| Switching Energy(Eoff) | 650uJ |
| Turn-On Energy (Eon) | - |
167W 40A 1.4kV TO-247AD Single IGBTs RoHS