Infineon · Thyristors & Power Discretes · MPN IRG7PH44K10D-EPBF
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| Td(off) | 315ns |
|---|---|
| Pd - Power Dissipation | 320W |
| Td(on) | 75ns |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 70A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 200nC |
| Reverse Recovery Time(trr) | 130ns |
| Switching Energy(Eoff) | 1.3mJ |
320W 70A 1.2kV TO-247AD Single IGBTs RoHS