Infineon IRG7PH35UD1PBF

Infineon · Thyristors & Power Discretes · MPN IRG7PH35UD1PBF

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Specifications

Td(off)160ns
Pd - Power Dissipation179W
Operating Temperature-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)130nC
Switching Energy(Eoff)620uJ

Technical details

179W 50A 1.2kV TO-247AC Single IGBTs RoHS

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