Infineon IRG7PH28UD1PBF

Infineon · Thyristors & Power Discretes · MPN IRG7PH28UD1PBF

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Specifications

Td(off)229ns
Pd - Power Dissipation115W
Td(on)-
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)90nC
Switching Energy(Eoff)543uJ
Turn-On Energy (Eon)-

Technical details

115W 30A 1.2kV TO-247AC Single IGBTs RoHS

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