Infineon · Thyristors & Power Discretes · MPN IRG7PG42UD-EPBF
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| Td(off) | 229ns |
|---|---|
| Pd - Power Dissipation | 320W |
| Td(on) | 25ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 85A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 157nC |
| Reverse Recovery Time(trr) | 153ns |
| Switching Energy(Eoff) | 1.182mJ |
320W 85A 1kV TO-247AD Single IGBTs RoHS