Infineon · Thyristors & Power Discretes · MPN IRG7PG35UPBF
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 210W |
| Td(on) | 30ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 55A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 85nC |
| Switching Energy(Eoff) | 620uJ |
| Turn-On Energy (Eon) | 1.06mJ |
210W 55A 1kV TO-247AC Single IGBTs RoHS