Infineon · Thyristors & Power Discretes · MPN IRG4RC10UTRPBF
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| Td(off) | 116ns |
|---|---|
| Pd - Power Dissipation | 38W |
| Td(on) | 19ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 8.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 15nC |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 80uJ |
38W 8.5A 600V DPAK Single IGBTs RoHS