Infineon IRG4RC10KDTRPBF

Infineon · Thyristors & Power Discretes · MPN IRG4RC10KDTRPBF

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Specifications

Pd - Power Dissipation38W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)9A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)28ns
Switching Energy(Eoff)140uJ
Turn-On Energy (Eon)250uJ

Technical details

38W 9A 600V DPAK Single IGBTs RoHS

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