Infineon · Thyristors & Power Discretes · MPN IRG4PSH71UDPBF
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| Pd - Power Dissipation | 350W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 99A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 110ns |
| Switching Energy(Eoff) | 9.4mJ |
| Turn-On Energy (Eon) | 8.8mJ |
350W 99A 1.2kV SUPER-247(TO-274AA) Single IGBTs RoHS