Infineon IRG4PH30KDPBF

Infineon · Thyristors & Power Discretes · MPN IRG4PH30KDPBF

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Specifications

Pd - Power Dissipation100W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)1.15mJ
Turn-On Energy (Eon)950uJ

Technical details

100W 20A 1.2kV TO-247AC Single IGBTs

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