Infineon · Thyristors & Power Discretes · MPN IRG4PC50KPBF
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 200W |
| Td(on) | 38ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 52A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,30A |
| Gate Charge(Qg) | 200nC |
| Switching Energy(Eoff) | 680uJ |
| Turn-On Energy (Eon) | 490uJ |
200W 52A 600V TO-247AC Single IGBTs RoHS