Infineon IRG4PC30SPBF

Infineon · Thyristors & Power Discretes · MPN IRG4PC30SPBF

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Specifications

Td(off)540ns
Pd - Power Dissipation100W
Td(on)22ns
Operating Temperature-
Current - Collector(Ic)34A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.6V@15V,18A
Gate Charge(Qg)50nC
Switching Energy(Eoff)3.45mJ
Turn-On Energy (Eon)260uJ

Technical details

100W 34A 600V TO-247AC Single IGBTs

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