Infineon IRG4BH20K-SPBF

Infineon · Thyristors & Power Discretes · MPN IRG4BH20K-SPBF

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Specifications

Td(off)93ns
Pd - Power Dissipation60W
Td(on)23ns
Operating Temperature-
Current - Collector(Ic)11A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.3V@15V,5A
Gate Charge(Qg)28nC
Switching Energy(Eoff)440uJ
Turn-On Energy (Eon)450uJ

Technical details

60W 11A 1.2kV D2PAK Single IGBTs RoHS

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