Infineon · Thyristors & Power Discretes · MPN IRG4BC30WPBF
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 100W |
| Td(on) | 25ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 23A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 51nC |
| Switching Energy(Eoff) | 130uJ |
| Turn-On Energy (Eon) | 130uJ |
100W 23A 600V TO-220AB Single IGBTs RoHS