Infineon IRG4BC30W-SPBF

Infineon · Thyristors & Power Discretes · MPN IRG4BC30W-SPBF

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Specifications

Td(off)99ns
Pd - Power Dissipation100W
Td(on)25ns
Operating Temperature-
Current - Collector(Ic)23A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)76nC
Switching Energy(Eoff)130uJ
Turn-On Energy (Eon)130uJ

Technical details

100W 23A 600V D2PAK Single IGBTs

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