Infineon · Thyristors & Power Discretes · MPN IRG4BC30KPBF
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| Td(off) | 130ns |
|---|---|
| Pd - Power Dissipation | 100W |
| Td(on) | 26ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 28A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,16A |
| Gate Charge(Qg) | 100nC |
| Switching Energy(Eoff) | 510uJ |
| Turn-On Energy (Eon) | 360uJ |
100W 28A 600V TO-220AB Single IGBTs RoHS