Infineon · Thyristors & Power Discretes · MPN IRG4BC30KD-SPBF
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 100W |
| Td(on) | 60ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 28A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,16A |
| Gate Charge(Qg) | 67nC |
| Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 580uJ |
100W 28A 600V D2PAK Single IGBTs RoHS