Infineon · Thyristors & Power Discretes · MPN IRG4BC30FD1PBF
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| Td(off) | 250ns |
|---|---|
| Pd - Power Dissipation | 100W |
| Td(on) | 22ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 31A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 57nC |
| Reverse Recovery Time(trr) | 46ns |
| Switching Energy(Eoff) | 1.42mJ |
100W 31A 600V TO-220AB Single IGBTs RoHS