Infineon · Thyristors & Power Discretes · MPN IRG4BC30FD-SPBF
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| Pd - Power Dissipation | 100W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 31A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 42ns |
| Switching Energy(Eoff) | 1.39mJ |
| Turn-On Energy (Eon) | 630uJ |
100W 31A 600V D2PAK Single IGBTs RoHS